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(Transportation-News.com, August 16, 2018 ) Gallium Nitride (GaN) is a new material with improved performance in comparison to semiconductor devices such as SiC and GaAS. The market for Power GaN is anticipated to flourish in the near future attributed to its better performance, increasing commercial applications, as well as increasing demand for wireless charging. However, factors such as inadequate availability of GaN material may hamper the market growth.
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Global Power GaN Market Players:
EFFICIENT POWER CONVERSION CORPORATION
FUJITSU
INFINEON TECHNOLOGIES AG
CREE INC.
MITSUBISHI ELECTRIC
TOSHIBA CORP.
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
GAN SYSTEMS
VISIC TECHNOLOGIES
NAVITAS SEMICONDUCTOR
The "Global Power GaN Market Analysis to 2025" is a specialized and in-depth study of the Power GaN industry with a focus on the global market trend. The report aims to provide an overview of the global Power GaN market with detailed market segmentation by device type, vertical and geography. The global Power GaN market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading Power GaN market players and offers key trends and opportunities in the market.
The report provides a detailed overview of the industry including both qualitative and quantitative information. It provides overview and forecast of the global Power GaN market based on device type and vertical. It also provides Power GaN market size and forecast till 2025 for overall Power GaN market with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America (SAM). The market by each region is later sub-segmented by respective countries and segments. The report covers analysis and forecast of 16 countries globally along with current trend and opportunities prevailing in the region.
Besides this, the report analyzes factors affecting the Power GaN market from both demand and supply side and further evaluates market dynamics affecting the Power GaN market during the forecast period i.e., drivers, restraints, opportunities, and future trend. The report also provides exhaustive PEST analysis for all five regions namely; North America, Europe, APAC, MEA and South America after evaluating political, economic, social and technological factors affecting the Power GaN market in these regions.
Also, key Power GaN players influencing the market are profiled in the study along with their SWOT analysis and market strategies. The report also focuses on leading industry players with information such as company profiles, products and services offered, financial information for the last 3 years, and the key development for the past five years. Some of the major players influencing the Power GaN market are Efficient Power Conversion Corporation, FUJITSU, Infineon Technologies AG, CREE INC., Mitsubishi Electric, Toshiba Corp., Taiwan Semiconductor Manufacturing Company, GaN SYSTEMS, Visic Technologies, and Navitas Semiconductor among others.
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